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ECO-PACTM 2 IGBT Module
Preliminary Data Sheet
PSHI 50/12*
IC25 = 49 A VCES = 1200 V VCE(sat)typ. = 3.1 V
F10 A1 K10 K13 H13
S18 N9 NTC P18
PSHI 50/12*
*NTC optional
IGBTs
Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot Symbol TC = 25C TC = 80C VGE = 15 V; RG = 47 ; TVJ = 125C RBSOA, Clamped inductive load; L = 100 H VCE = VCES; VGE = 15 V; RG = 47 ; TVJ = 125C non-repetitive TC = 25C Conditions Conditions TVJ = 25C to 150C Maximum Ratings 1200 20 49 33 50 VCES 10 208 V V A A A s W
Features
* * * * * * * * * * * * * *
Package with DCB ceramic base plate Isolation voltage 3000 V Planar glass passivated chips Low forward voltage drop
Leads suitable for PC board soldering
UL registered, E 148688
Applications
AC motor control AC servo and robot drives power supplies
Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 3.1 3.5 4.5 3.7 6.5 1.1 4.2 180 100 70 500 70 4.6 3.4 1.65 1.2 V V V mA mA nA ns ns ns ns mJ mJ nF 0.6 K/W K/W
Advantages
Easy to mount with two screws Space and weight savings Improved temperature and power cycling capability High power density Small and light weight
VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies RthJC RthJH
IC = 50 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 1 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25C TVJ = 125C
VCE = 0 V; VGE = 20 V Inductive load, TVJ = 125C VCE = 600 V; IC = 30 A VGE = 15/0 V; RG = 47
VCE = 25 V; VGE = 0 V; f = 1 MHz (per IGBT)
with heatsink compound (0.42 K/m.K; 50 m)
Caution: These Devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions.
2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSHI 50/12
Reverse diodes (FRED)
Symbol IF25 IF80 Symbol VF IRM trr RthJC RthJH Conditions TC = 25C TC = 80C Conditions IF = 30 A; TVJ = 25C TVJ = 125C Maximum Ratings 49 31 A A Package style and outline
Dimensions in mm (1mm = 0.0394")
Characteristic Values min. typ. max. 2.4 1.77 27 150 2.6 2.7 V V A ns 1.3 K/W K/W
IF = 30 A; diF/dt = 500 A/s; TVJ = 125C VR = 600 V; VGE = 0 V
with heatsink compound (0.42 K/m.K; 50 m)
Temperature Sensor NTC
Symbol R25 B25/50 Conditions T = 25C Characteristic Values min. typ. max. 455 470 3474 485 k K
Module
Symbol TVJ Tstg VISOL Md a Symbol dS dA Weight IISOL 1 mA; 50/60 Hz Mounting torque (M4) Max. allowable acceleration Conditions Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) Conditions Maximum Ratings -40...+150 -40...+150 3000 1.5 - 2.0 14 - 18 50 C C V~ Nm lb.in. m/s 2
Characteristic Values min. typ. max. 11.2 11.2 24 mm mm g
2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSHI 50/12
80
A IC
VGE = 17 V 15 V 13 V 11V
80 A IC 60
VGE = 17V 15V 13V 11V
60
40
TVJ = 25C
40
20
9V
20
9V TVJ = 125C
0
42T120
0
1
2
3
4
VCE
5
6V7
0
42T120
0
1
2
3
4
5
VCE
6V7
Fig. 1 Typ. output characteristics
80
A IC 50 40 A 30
Fig. 2 Typ. output characteristics
60
VCE = 20V
IF
40
20
TVJ = 125C
TVJ = 25C
20
TVJ = 125C TVJ = 25C
42T120
10 0
42T120
0
4
6
8
10
12
VGE
14 V 16
0
1
2
VF
3
V
4
Fig. 3 Typ. transfer characteristics
Fig. 4 Typ. forward characteristics of free wheeling diode
50
trr
20
V
200 160 ns 120
TVJ = 125C VR = 600 V IF = 15 A IRM
15
VGE
40 A
IRM
trr
30 10
VCE = 600V IC = 25A
20 10
42T120
80 40
5
0
0
42T120
0
40
80
120
QG
nC
160
0
200
400
600
-di/dt
A/s 800
1000
0
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of free wheeling diode
2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSHI 50/12
15
mJ Eon
VCE = 600 V VGE = 15 V RG = 47 TVJ = 125C
150 ns 100 t Eoff
12
mJ td(off) Eoff
600 ns 400 t
10
8
VCE = 600V VGE = 15V RG = 47 TVJ = 125C
td(on) tr
5
50
4
200
Eon
0
42T120
0
20
40
IC
A
60
0
0
tf 0 20 40 IC A
42T120
0 60
Fig. 7 Typ. turn on energy and switching
Fig. 8 Typ. turn off energy and switching times versus collector current times versus collector current
8
mJ t Eoff td(off) 800 ns 600 t
4
mJ Eon
td(on)
160 ns 120
3
Eon tr
VCE = 600 V VGE = 15 V IC = 25 A TVJ = 125C
42T120
6
Eoff
2
80
4
VCE = 600 V VGE = 15 V IC = 25 A TVJ = 125C
400
1
40
2
200 tf
0
0
20
40
60
RG
80 100
0
0
42T120
0
20
40
60
RG
80
100
0
Fig. 9 Typ. turn on energy and switching
Fig. 10 Typ. turn off energy and switching times versus gate resistor times versus gate resistor
10 K/W
diode
60
A ICM
40
RG = 47 TVJ = 125C
ZthJC
1
IGBT
0,1 0,01 0,001
single pulse
20
0
42T120
0
200
400
600
800 1000 1200 1400 V
VCE
0,0001 0,00001 0,0001 0,001
MDI...50-12P1
0,01
0,1 t
1
s 10
Fig. 11 Reverse biased safe operating area
Fig. 12
Typ. transient thermal impedance RBSOA
2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20

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